GaN and SiC: Transformative Power of Wide-Bandgap Semiconductors and Next Era of Electronics

By Dr. Neeraj Agarwal

For decades, silicon (Si) has not merely underpinned the semiconductor industry, it has transformed modern life, powering everything from the chips in our computers to the cells in solar panels. Its combination of remarkable electronic properties and cost-effective production has cemented silicon as the standard for mass adoption.

Yet, as technology demands evolve toward higher performance, greater power efficiency, and resilience in extreme environments, silicon alone can no longer meet the industry’s ambitions. This has sparked a shift toward third-generation semiconductors, especially Gallium Nitride (GaN) and Silicon Carbide (SiC), materials that stand ready to drive the next paradigm shift in technology.

Unlike silicon, GaN and SiC feature wide bandgaps, enabling operation at significantly higher voltages, temperatures, and frequencies—capabilities that are indispensable for the next wave of advanced applications.

Together, GaN and SiC are not merely supplementing silicon; they are 1undamentally redeffning what is possible in high-performance electronics, from power conversion and telecommunications to electric vehicles and display technology.

Comprehending Third-Generation Paradigm

Third-generation semiconductors, such as GaN and SiC, are classified as wide-bandgap (WBG) materials, characterized by energy bandgaps of 3.4 eV and 3.3 eV, respectively, in stark contrast to silicon’s 1.1 eV. This significant difference limits silicon’s performance in high- voltage and high-temperature environments.

Wide-bandgap materials present several advantages, including:

• Higher breakdown voltages
• Greater thermal stability
• Enhanced switching speeds

These attributes enable GaN and SiC to excel in extreme operating conditions. Their unique properties, such as high energy density capacities for power-intensive devices and operational efficiency at elevated temperatures without the need for additional cooling, render them smaller, lighter, and capable of high-frequency switching for 5G and RF applications. In essence, wide-bandgap-based power electronics can function at temperatures up to ten times higher, voltages up to ten times greater, and switching frequencies up to five times higher than traditional silicon devices.

Transformative Power of GaN and SiC in Shaping Next-Generation Electronics

GaN and SiC are at the forefront of next-generation electronics, leveraging their distinctive properties to drive innovation across various industries.

Elevating Connectivity: Impact of GaN on Telecommunications and Consumer Electronics

Fuelled by the increasing demands of 5G technology, GaN has gained prominence in telecommunications infrastructure. Its high electron mobility and breakdown voltage enable exceptional performance at elevated frequencies, making it ideal for RF amplifiers in 5G base stations. GaN-based devices efficiently handle the high data rates and frequencies required for seamless 5G connectivity and beyond.

In consumer electronics, GaN has revolutionized fast charging with its high switching speeds and thermal efficiency, producing smaller, faster, and more energy- efficient chargers than traditional silicon. As demand rises for larger screens, faster connectivity, and bigger batteries, compact, high-wattage GaN chargers are now preferred. GaN technology is widely adopted in fast and wireless chargers, as seen in products like Apple’s 140-watt charger for the MacBook Pro, which reduces charging times while maintaining portability.

GaN is also transforming data centers by delivering e1ffcient power management crucial for dense, high-performance environments. As data centers scale to support cloud computing, AI, and big data, GaN’s e1ffciency and high-1requency switching capabilities are vital for lowering operational costs and promoting sustainability.

Further, GaN High Electron Mobility Transistors (HEMTs) are advancing electronics, achieving speeds up to 100 times faster than silicon transistors, and enabling high- power amplifiers with exceptional efficiency.

SiC’s Dominance in Automotive and Renewable Energy Applications

Conventional silicon devices often suffer from power losses, excessive heat, and high energy demands, especially under harsh conditions, necessitating bulky cooling systems that limit the efficiency and range of electric vehicles (EVs). In contrast, Silicon Carbide (SiC) power transistors operate at higher voltages and temperatures with minimal cooling, drastically reducing weight and energy consumption.

SiC stands out for its wide bandgap and exceptional thermal conductivity, which enhances heat dissipation. While traditional silicon semiconductors can function effectively up to around 175°C, SiC can operate beyond 300°C, with the potential to reach up to 900°C with suitable packaging, making it invaluable for high-power applications. This capability has led major EV manufacturers to adopt SiC- based inverters, minimizing energy losses and extending driving ranges.

Silicon-based power devices like IGBTs and MOSFETs currently dominate applications below 600 volts, but SiC technology is redefining the field, reaching capabilities of 22,000 volts and beyond. Tesla’s integration of SiC in the Model 3 exemplifies this shift, showcasing SiC’s critical role in enhancing EV performance.

In renewable energy, SiC technology is also gaining traction, especially in solar inverters where it provides approximately 20% cost savings over silicon alternatives. With its resilience in high-temperature and variable environments, SiC maximizes power output and prolongs the lifespan of renewable systems, becoming essential for solar inverters, wind turbines, and energy storage solutions. For industries prioritizing sustainability, SiC offers efficiency gains that make green technologies more viable and cost-effective.

GaN as Disruptors in Display Technology: Optical Revolution of GaN

GaN’s transformative impact on display technology is profound. The development of GaN-based blue LEDs revolutionized lighting, leading to the creation of white LEDs by 1996 and earning Shūji Nakamura, Isamu Akasaki, and Hiroshi Amano the 2014 Nobel Prize in Physics.

This breakthrough facilitated LEDs capable of producing up to 50,000 shades of white, which now represent over half of global residential lighting—a figure projected to approach total adoption within the next decade. This transition could drastically reduce CO₂ emissions by approximately 1.5 billion tons.

Furthermore, GaN’s potential extends to micro and UV LEDs, driving advancements in display technology and medical applications, despite ongoing challenges related to cost and efficiency.

From CRT to LED, Micro LED, and OLED

The advent of GaN-based blue LEDs marked a pivotal shift from bulky cathode-ray tube (CRT) technology to sleek LED displays, setting the stage for OLED (Organic Light- Emitting Diode) and Micro LED innovations.

LED and OLED Displays: GaN-powered LEDs have facilitated the creation of thinner, brighter, and more energy-efficient displays. OLED technology enhances this with deeper blacks and richer colors, yet it faces challenges like burn-in and limited lifespan—issues that Micro LED technology aims to address.

Micro LED: Utilizing GaN, Micro LED displays deliver superior brightness, energy efficiency, and longevity compared to OLEDs. Comprising tiny individual LEDs as pixels, Micro LEDs are increasingly adopted in AR/VR devices, wearables, and large-format displays, promising enhanced durability and color quality.

Blu-ray Disc: Blu-ray technology revolutionizes digital storage by increasing disc capacity 10 to 50 times, providing 25 GB for single-layer and 50 GB for dual-layer formats—far exceeding the 4.7 GB of standard DVDs. With data transfer rates up to 54 Mbps, Blu-ray discs offer an efficient solution for large data backups.

Beyond Displays: GaN’s Role in Lighting and Ǫuantum Dots

GaN-based LEDs extend their applications beyond displays, providing efficient, long-lasting solutions that significantly reduce energy consumption in general lighting. Innovations in GaN have also enabled quantum dots (ǪDs) to enhance display colors, resulting in more vivid and accurate imagery. These semiconductor-based ǪDs have revolutionized display quality, further amplifying GaN’s impact.

GaN and SiC Growth Projections

The global GaN and SiC markets are poised for exceptional growth in the coming years.

The GaN market is expected to expand from $1.48 billion in 2022 to $6.77 billion by 2030, reflecting a robust CAGR of 24.2%.

The SiC market is projected to reach $6.35 billion by 2030, growing at a CAGR of 30.3% from 2023 to 2030.

This rapid growth highlights the increasing demand for power-efficient, high-performance devices across automotive, telecommunications, and renewable energy sectors.

Addressing Adoption Challenges: Despite their advantages, the adoption of GaN and SiC technologies faces challenges, including high manufacturing costs, complex fabrication processes, and the need for specialized equipment.

Additionally, the unique characteristics of GaN and SiC devices require a re-evaluation of traditional design methodologies, necessitating new skills for engineers. Nevertheless, the momentum behind GaN and SiC is undeniable.

As industries demand higher performance and efficiency, increased investments in research and development are likely to accelerate the evolution of these technologies, fostering broader acceptance and integration.

Paradigm Shift in Semiconductor Technology

The emergence of GaN and SiC represents a transformative shift in semiconductor technology. As industries increasingly prioritize energy efficiency, compactness, and superior performance, these materials are set to redefine power electronics and high-frequency applications. Their broad applicability—from telecommunications and automotive to consumer electronics and display technologies—will be crucial in driving future innovations.

The escalating demand for enhanced efficiency and performance signals that the shift toward GaN and SiC is more than a trend; it represents a revolutionary reimagining of electronic capabilities.

With ongoing advancements and increased investment, GaN and SiC are poised to unlock unprecedented possibilities, ushering in a new era in electronics that promises to reshape our technological landscape.

Dr. Neeraj Agarwal is Associate Director & Research Fellow (Microelectronics & Semiconductor) at India Cellular and Electronics Association